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| SEMICONDUCTOR HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. BRAND G40N60B3 April 1997 Features * 70A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 100ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Ordering Information PART NUMBER HGTG40N60B3 PACKAGE TO-247 Formerly Developmental Type TA49052. NOTE: When ordering, use the entire part number. Symbol C G E Packaging JEDEC STYLE TO-247 E C G COLLECTOR (FLANGE) HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 3943.1 1 HGTG40N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60B3 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 70 40 330 20 30 100A at 600V 290 2.33 100 -55 to 150 260 2 10 W W/oC mJ oC oC UNITS V 600 A A A V V s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 3. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.0 VCE = 480V VCE = 600V 200 100 TYP 25 1.4 1.5 4.8 MAX 100 6.0 2.0 2.3 6.0 100 UNITS V V A mA V V V nA A A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 3 VGE = 15V L = 100H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 7.5 250 335 330 435 V nC nC 2 HGTG40N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Thermal Resistance Junction To Case NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF td(ON)I trI td(OFF)I tfI EON EOFF RJC IGBT and Diode Both at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG= 3 L = 100H Test Circuit (Figure 17) TEST CONDITIONS IGBT and Diode Both at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG= 3 L = 100H Test Circuit - Figure 17 MIN TYP 47 35 170 50 1050 800 47 35 285 100 1850 2000 MAX 200 100 1200 1400 375 200 0.43 UNITS ns ns ns ns J J ns ns ns ns J J oC/W Typical Performance Curves 100 (Unless Otherwise Specified) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V ICE , DC COLLECTOR CURRENT (A) 80 250 TJ = 150oC, RG = 3, VGE = 15V 200 60 PACKAGE LIMITED 40 150 100 20 50 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTG40N60B3 Typical Performance Curves 100 fMAX, OPERATING FREQUENCY (kHz) (Unless Otherwise Specified) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) TJ = 150oC, RG = 3, L = 100H, V CE = 480V TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V VCE = 360V, RGE = 3, TJ = 125oC 16 14 12 10 8 6 4 tSC ISC 800 700 600 500 400 300 200 15 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43oC/W, SEE NOTES 1 10 20 40 60 80 100 10 11 12 13 14 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) 200 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s 150 TC = -55oC 100 TC = 150oC ICE, COLLECTOR TO EMITTER CURRENT (A) 200 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s 150 TC = -55oC TC = 150oC TC = 25oC TC = 25oC 100 50 50 0 0 1 2 3 4 5 0 0 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE EON , TURN-ON ENERGY LOSS (mJ) RG = 3, L = 100H, VCE = 480V 16 EOFF , TURN-OFF ENERGY LOSS (mJ) 20 8 RG = 3, L = 100H, VCE = 480V TJ = 25oC, VGE = 10V TJ = 150oC, VGE = 10V 6 TJ = 150oC; VGE = 10V AND 15V 4 12 8 TJ = 150oC, VGE = 15V 2 TJ = 25oC; VGE = 10V AND 15V 0 20 40 60 80 100 4 TJ = 25oC, VGE = 15V 0 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 4 ISC, PEAK SHORT CIRCUIT CURRENT (A) 4 18 900 HGTG40N60B3 Typical Performance Curves 90 tdI , TURN-ON DELAY TIME (ns) 80 70 60 50 40 30 TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 15V RG = 3, L = 100H, VCE = 480V TJ = 25oC, VGE = 10V trI , RISE TIME (ns) TJ = 150oC, VGE = 10V (Unless Otherwise Specified) (Continued) 600 RG = 3, L = 100H, VCE = 480V 500 400 300 200 100 0 TJ = 150oC, VGE = 10V TJ = 25oC, VGE = 10V TJ = 25oC AND 150oC, VGE = 10V AND 15V 20 40 60 80 100 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 100H, VCE = 480V TJ = 150oC, VGE = 15V tfI , FALL TIME (ns) 250 TJ = 150oC, VGE = 10V 200 TJ = 25oC, VGE = 15V 150 TJ = 25oC, VGE = 15V 100 20 40 60 80 100 180 RG = 3, L = 100H, VCE = 480V 140 TJ = 150oC, VGE = 10V AND 15V 100 60 TJ = 25oC, VGE = 10V AND 15V 20 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 200 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE = <0.5%, VCE = 10V PULSE DURATION = 25s 160 15 IGREF = 3.255mA, RL = 7.5, TC = 25oC 12 VCE = 400V VCE = 600V 9 120 80 TC = 25oC TC = 150oC TC = -55oC 6 VCE = 200V 3 40 0 0 4 5 6 7 8 9 10 VGE, GATE TO EMITTER VOLTAGE (V) 0 50 100 150 200 250 300 Qg, GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 5 HGTG40N60B3 Typical Performance Curves 14 FREQUENCY = 400kHz 12 C, CAPACITANCE (nF) CIES 10 8 6 4 COES 2 CRES 0 0 5 10 15 20 25 (Unless Otherwise Specified) (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL IMPEDANCE 100 0.5 0.2 t1 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 100 101 PD t2 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms L = 100H RHRP3060 90% VGE EOFF VCE + VDD = 480V ICE 90% 10% td(OFF)I tfI tfI td(ON)I 10% EON RG = 3 FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS 6 HGTG40N60B3 Handling Precautions for IGBT's Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26TM" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 10. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 18. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7 HGTG40N60B3 TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE E A OS Q OR D TERM. 4 OP INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 - L1 L b1 b2 c b 1 2 3 J1 3 2 1 E e e1 J1 L L1 OP Q 0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85 e e1 BACK VIEW LEAD 1 LEAD 2 LEAD 3 TERM. 4 - GATE - COLLECTOR - EMITTER - COLLECTOR OR OS NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400 SEMICONDUCTOR 8 |
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